Yuri(Mazour)MazurMD

PubMed

• Bi-stability, hysteresis, and memory of voltage-gated lysenin channels.
  Fologea, D., Krueger, E., Mazur, Y. I., Stith, C., Okuyama, Y., Henry, R., Salamo, G. J.> ;Biochim Biophys Acta. 2011 Dec
• Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxy.
  Wu, J., Shao, D., Dorogan, V. G., Li, A. Z., Li, S., DeCuir, E. A., Manasreh, M. O., Wang, Z. M., Mazur, Y. I., Salamo, G. J.> ;Nano Lett. 2010 Apr 14
• Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates.
  Wang, Z. M., Xie, Y. Z., Kunets, V. P., Dorogan, V. G., Mazur, Y. I., Salamo, G. J.> ;Nanoscale Res Lett. 2010
• Potential analytical applications of lysenin channels for detection of multivalent ions.
  Fologea, D., Al Faori, R., Krueger, E., Mazur, Y. I., Kern, M., Williams, M., Mortazavi, A., Henry, R., Salamo, G. J.> ;Anal Bioanal Chem. 2011 Oct
• Near infrared broadband emission of In0.35Ga0.65As quantum dots on high index GaAs surfaces.
  Wu, J., Wang, Z. M., Dorogan, V. G., Li, S., Mazur, Y. I., Salamo, G. J.> ;Nanoscale. 2011 Apr
• Multivalent ions control the transport through lysenin channels.
  Fologea, D., Krueger, E., Al Faori, R., Lee, R., Mazur, Y. I., Henry, R., Arnold, M., Salamo, G. J.> ;Biophys Chem. 2010 Nov
• Self-organization of InAs quantum-dot clusters directed by droplet homoepitaxy.
  Wang, Z. M., Liang, B., Sablon, K. A., Lee, J., Mazur, Y. I., Strom, N. W., Salamo, G. J.> ;Small. 2007 Feb
• Energy transfer within ultralow density twin InAs quantum dots grown by droplet epitaxy.
  Liang, B. L., Wang, Z. M., Wang, X. Y., Lee, J. H., Mazur, Y. I., Shih, C. K., Salamo, G. J.> ;ACS Nano. 2008 Nov 25
• Controlled gating of lysenin pores.
  Fologea, D., Krueger, E., Lee, R., Naglak, M., Mazur, Y., Henry, R., Salamo, G.> ;Biophys Chem. 2010 Jan 01
• Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure.
  Mazur, Y. I., Dorogan, V. G., Schmidbauer, M., Tarasov, G. G., Johnson, S. R., Lu, X., Yu, S. Q., Wang, Z. h. M., Tiedje, T., Salamo, G. J.> ;Nanotechnology. 2011 Sep 16
• Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structure.
  Wong, P. S., Liang, B. L., Dorogan, V. G., Albrecht, A. R., Tatebayashi, J., He, X., Nuntawong, N., Mazur, Y. I., Salamo, G. J., Brueck, S. R., Huffaker, D. L.> ;Nanotechnology. 2008 Oct 29
• Band alignment tailoring of InAs1-xSbx/GaAs quantum dots: control of type I to type II transition.
  He, J., Reyner, C. J., Liang, B. L., Nunna, K., Huffaker, D. L., Pavarelli, N., Gradkowski, K., Ochalski, T. J., Huyet, G., Dorogan, V. G., Mazur, Y. I., Salamo, G. J.> ;Nano Lett. 2010 Aug 11
• Cooperative Effects in the Photoluminescence of (In,Ga)As/GaAs Quantum Dot Chain Structures.
  Mazur, Y. I., Dorogan, V., Marega, E., Cesar, D., Lopez-Richard, V., Marques, G., Zhuchenko, Z. Y., Tarasov, G., Salamo, G.> ;Nanoscale Res Lett. 2010
• Aharonov-Bohm interference in neutral excitons: effects of built-in electric fields.
  Teodoro, M. D., Campo, V. L., Lopez-Richard, V., Marega, E., Marques, G. E., Gobato, Y. G., Iikawa, F., Brasil, M. J., Abuwaar, Z. Y., Dorogan, V. G., Mazur, Y. I., Be...> ;Phys Rev Lett. 2010 Feb 26
• Engineering of 3D self-directed quantum dot ordering in multilayer InGaAs/GaAs nanostructures by means of flux gas composition.
  Lytvyn, P. M., Mazur, Y. I., Marega, E., Dorogan, V. G., Kladko, V. P., Slobodian, M. V., Strelchuk, V. V., Hussein, M. L., Ware, M. E., Salamo, G. J.> ;Nanotechnology. 2008 Dec 17
• Tuning the optical performance of surface quantum dots in InGaAs/GaAs hybrid structures.
  Liang, B. L., Wang, Z. h. M., Mazur, Y. I., Seydmohamadi, S. h., Ware, M. E., Salamo, G. J.> ;Opt Express. 2007 Jun 25
• InAs quantum dot clusters grown on GaAs droplet templates: surface morphologies and optical properties.
  Liang, B. L., Dorogan, V. G., Mazur, Y. I., Strom, N. W., Lee, J. H., Sablon, K. A., Wang, Z. h. M., Salamo, G. J.> ;J Nanosci Nanotechnol. 2009 May 01
• Spectroscopy of shallow InAs/InP quantum wire nanostructures.
  Mazur, Y. I., Dorogan, V. G., Bierwagen, O., Tarasov, G. G., DeCuir, E. A., Noda, S., Zhuchenko, Z. Y., Manasreh, M. O., Masselink, W. T., Salamo, G. J.> ;Nanotechnology. 2009 Feb 11
• Coherent exciton-surface-plasmon-polariton interaction in hybrid metal-semiconductor nanostructures.
  Vasa, P., Pomraenke, R., Schwieger, S., Mazur, Y. I., Kunets, V., Srinivasan, P., Johnson, E., Kihm, J. E., Kim, D. S., Runge, E., Salamo, G., Lienau, C.> ;Phys Rev Lett. 2008 Sep 12
• Controlling planar and vertical ordering in three-dimensional (In,Ga)As quantum dot lattices by GaAs surface orientation.
  Schmidbauer, M., Seydmohamadi, S. h., Grigoriev, D., Wang, Z. h. M., Mazur, Y. I., Schäfer, P., Hanke, M., Köhler, R., Salamo, G. J.> ;Phys Rev Lett. 2006 Feb 17
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